Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

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Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Watling J.R.   Yang L.   Boriçi M.   Barker J.R.   Asenov A.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 475-479

Springer Publishing Company

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Nakatsuji Hiroshi   Kamakura Yoshinari   Taniguchi Kenji  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 109-112

Springer Publishing Company

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Study of RF Linearity in sub-50 nm MOSFETs Using Simulations: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Ma Wei   Kaya Savas   Asenov Asen  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 347-352

Springer Publishing Company

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Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Krishnan Santhosh   Vasileska Dragica  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 443-448

Springer Publishing Company

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