First-Principles Study on Electronic Structure of Gd-Doped HfO₂ High k Gate Dielectrics

By Liu Xiao-Jie   Li Ai-Dong   Qian Xu   Kong Ji-Zhou   Zhou Jian   Wu Di  

Integrated Ferroelectrics, Vol. 134, Iss. 1, 2012-01 ,pp. : 3-9

Taylor & Francis Ltd

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Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

By Nishikawa T.   Otsuka T.   Morita K.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 41-50

Taylor & Francis Ltd

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CRYSTALLIZATION BEHAVIOR OF HfO2 FILMS FOR (Y,Yb)MnO3/HfO2/Si STRUCTURES

By Suzuki Kazuyuki   Kato Kazumi  

Integrated Ferroelectrics, Vol. 94, Iss. 1, 2007-10 ,pp. : 3-10

Taylor & Francis Ltd

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Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition

By Zhuang Weiwei   Conley John F.   Ono Yoshi   Evans David R.   Solanki R.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 3-12

Taylor & Francis Ltd

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Formation and disruption of conductive filaments in a HfO₂/TiN structure

By Brivio S   Tallarida G   Cianci E   Spiga S  

Nanotechnology, Vol. 25, Iss. 38, 2014-09 ,pp. : 385705-385711

IOP Publishing

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