THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy2O3 AND Sm2O3 GATE DIELECTRICS

By Hwang Yu-Ren   Chang Ingram Yin-ku   Wang Ming-tsong   Lee Joseph Ya-min  

Integrated Ferroelectrics, Vol. 97, Iss. 1, 2008-01 ,pp. : 111-120

Taylor & Francis Ltd

Access to resources Recommend Favorite

Temperature-Dependent Tunneling Current in NiSi₂ Nanocrystals Embedded in Metal-Oxide-Semiconductor Structure

By Tsai Jenn-Kai   Yeh Bin-Hong   Meen Teen-Hang   Wu Tian-Chiuan  

Integrated Ferroelectrics, Vol. 143, Iss. 1, 2013-01 ,pp. : 24-31

Taylor & Francis Ltd

Access to resources Recommend Favorite

WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS

By SHAO QI-YUE   LI AI-DONG   CHENG JIN-BO   XIA YI-DONG   WU DI   LIU ZHI-GUO   MING NAI-BEN  

Integrated Ferroelectrics, Vol. 74, Iss. 1, 2005-09 ,pp. : 3-11

Taylor & Francis Ltd

Access to resources Recommend Favorite

PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF ULTRATHIN Ga 2 O 3 -TiO 2 GATE DIELECTRICS ON Si (001) Substrates

By SEONG NAK-JIN   KIM EUI-TAE   YOON SOON-GIL  

Integrated Ferroelectrics, Vol. 74, Iss. 1, 2005-09 ,pp. : 181-187

Taylor & Francis Ltd

Access to resources Recommend Favorite

Ferroelectric Bi Modified YMnO3 Thin Films Grown on Si (001) Using Y2O3 Buffer Layer for Metal-Ferroelectric-Insulator-Semiconductor Structure

By Choi Taekjib   Shin Sanghun   Kim Young Sung   Lee Jaichan  

Integrated Ferroelectrics, Vol. 45, Iss. 1, 2002-01 ,pp. : 23-29

Taylor & Francis Ltd

Access to resources Recommend Favorite