PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF ULTRATHIN Ga 2 O 3 -TiO 2 GATE DIELECTRICS ON Si (001) Substrates

Author: SEONG NAK-JIN   KIM EUI-TAE   YOON SOON-GIL  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.74, Iss.1, 2005-09, pp. : 181-187

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content