Related content

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

By Hunt Mitchell R.   Sayyah Rana   Mitchell Cody   McCartney Crystal L.   Macleod Todd C.   Ho Fat D.  

Integrated Ferroelectrics, Vol. 157, Iss. 1, 2014-10 ,pp. : 71-80

Taylor & Francis Ltd

Access to resources Recommend Favorite

Fabrication and characterization of a charge-biased CMOS-MEMS resonant gate field effect transistor

By Chin C H   Li C S   Li M H   Wang Y L   Li S S  

Journal of Micromechanics and Microengineering, Vol. 24, Iss. 9, 2014-09 ,pp. : 95005-95016

IOP Publishing

Access to resources Recommend Favorite

THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy2O3 AND Sm2O3 GATE DIELECTRICS

By Hwang Yu-Ren   Chang Ingram Yin-ku   Wang Ming-tsong   Lee Joseph Ya-min  

Integrated Ferroelectrics, Vol. 97, Iss. 1, 2008-01 ,pp. : 111-120

Taylor & Francis Ltd

Access to resources Recommend Favorite

Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

By Hunt Mitchell R.   Sayyah Rana   Mitchell Cody   McCartney Crystal L.   Macleod Todd C.   Ho Fat D.  

Integrated Ferroelectrics, Vol. 157, Iss. 1, 2014-10 ,pp. : 81-88

Taylor & Francis Ltd

Access to resources Recommend Favorite

High performance tunnel field-effect transistor by gate and source engineering

By  

Nanotechnology, Vol. 25, Iss. 50, 2014-12 ,pp. : 505201-505208

IOP Publishing

Access to resources Recommend Favorite