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Inorganic Materials, Vol. 39, Iss. 1, 2003-01 ,pp. : 3-5

MAIK Nauka/Interperiodica

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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

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Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition

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Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

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