Publisher: Edp Sciences
E-ISSN: 1286-4897|7|7|1469-1486
ISSN: 1155-4320
Source: Journal de Physique III, Vol.7, Iss.7, 1997-07, pp. : 1469-1486
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Electrical activity of extended defects in polycrystalline silicon
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 1, 1988-01 ,pp. :
Dominant structural defects in amorphous silicon
Journal of Physics: Condensed Matter, Vol. 27, Iss. 34, 2015-01 ,pp. :