Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films

Author： Kaouache B.   Gergaud P.   Thomas O.   Bostrom O.   Legros M.  

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.70, Iss.2, 2003-11, pp. : 447-454

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