Related content

Effect of low and high temperature annealing on the electrical properties of pure N2O/SiH4 PECVD SiO2 deposited at a high rate

By Chanana R. K.   Upadhyay H. N.   Dwivedi R.   Srivastava S. K.  

International Journal of Electronics, Vol. 80, Iss. 4, 1996-04 ,pp. : 525-532

Taylor & Francis Ltd

Access to resources Recommend Favorite

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography

By Yamaguchi Hirotaka  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 715-718

Springer Publishing Company

Access to resources Recommend Favorite

Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO₂/Si_xN_y bimaterial microbridge test structure

By Jianqiang Han   Yan Li   Senlin Li   Qing Li  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 46002-46005

IOP Publishing

Access to resources Recommend Favorite

Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

By Si Weimin   Dudley Michael   Kong Hua   Sumakeris Joe   Carter Calvin  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 151-159

Springer Publishing Company

Access to resources Recommend Favorite

Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

By Ščajev Patrik  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 394-399

Springer Publishing Company

Access to resources Recommend Favorite