Effect of low and high temperature annealing on the electrical properties of pure N2O/SiH4 PECVD SiO2 deposited at a high rate

Author: Chanana R. K.   Upadhyay H. N.   Dwivedi R.   Srivastava S. K.  

Publisher: Taylor & Francis Ltd

ISSN: 1362-3060

Source: International Journal of Electronics, Vol.80, Iss.4, 1996-04, pp. : 525-532

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