![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Wang Y. Zhu C. Song Z. Li Y.
Publisher: Elsevier
ISSN: 0167-9317
Source: Microelectronic Engineering, Vol.71, Iss.1, 2004-01, pp. : 69-75
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
The Effect of nitrogen partial pressure on Zr-Si-N diffusion barrier
Microelectronic Engineering, Vol. 71, Iss. 1, 2004-01 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Yan Li Yuling Liu Aochen Wang Zhixin Yang Mingbin Sun Chuan Cheng Yufeng Zhang Nannan Zhang
Journal of Semiconductors, Vol. 35, Iss. 6, 2014-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
CVD TiN layers as diffusion barrier films on porous SiO 2 aerogel
By Bonitz J. Schulz S.E. Gessner T.
Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. :