Related content

The Effect of nitrogen partial pressure on Zr-Si-N diffusion barrier

By Song Z.X.   Xu K.W.   Chen H.  

Microelectronic Engineering, Vol. 71, Iss. 1, 2004-01 ,pp. : 28-33

Elsevier

Access to resources Recommend Favorite

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n -Type SiC for High-Temperature Applications

By Virshup Ariel  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 400-405

Springer Publishing Company

Access to resources Recommend Favorite

High-Temperature Resistant Intermetallic Compound Joints for Si Chips and Cu Substrates

By Takahashi Toshihide  

Journal of Electronic Materials, Vol. 39, Iss. 10, 2010-10 ,pp. : 2274-2280

Springer Publishing Company

Access to resources Recommend Favorite

The application of Cu/SiO₂ catalytic system in chemical mechanical planarization based on the stability of SiO₂ sol

By Yan Li   Yuling Liu   Aochen Wang   Zhixin Yang   Mingbin Sun   Chuan Cheng   Yufeng Zhang   Nannan Zhang  

Journal of Semiconductors, Vol. 35, Iss. 6, 2014-06 ,pp. : 66002-66008

IOP Publishing

Access to resources Recommend Favorite

CVD TiN layers as diffusion barrier films on porous SiO 2 aerogel

By Bonitz J.   Schulz S.E.   Gessner T.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 330-336

Elsevier

Access to resources Recommend Favorite