A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si(111) structure

Author： Moshfegh A.Z.   Akhavan O.  

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.6, Iss.4, 2003-08, pp. : 165-170

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Dielectric properties of high-permittivity A2/3CuTa4O12 ceramics

By Szwagierczak Dorota  

Microelectronics International, Vol. 31, Iss. 3, 2014-07 ,pp. : 137-142

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

By Tokei Z.   Kelleher D.   Mebarki B.   Mandrekar T.   Guggilla S.   Maex K.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 358-362

Elsevier

Access to resources Recommend Favorite

Optical wavelength response of Ta/p-Si position-sensitive detectors

By Henry J.   Livingstone J.  

International Journal of Electronics, Vol. 90, Iss. 10, 2003-10 ,pp. : 613-625

Taylor & Francis Ltd

Access to resources Recommend Favorite

Interfacial sliding in Cu/Ta/polyimide high density interconnects as a result of thermal cycling

By Zhmurkin D.   Gross T.   Buchwalter L.  

Journal of Electronic Materials, Vol. 26, Iss. 7, 1997-07 ,pp. : 791-797

Springer Publishing Company

Access to resources Recommend Favorite

Characteristics of MIS capacitors using Ta 2 O 5 films deposited on ZnO/p-Si

By Noh Y.S.   Chatterjee S.   Nandi S.   Samanta S.K.   Maiti C.K.   Maikap S.   Choi W.K.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 637-642

Elsevier

Access to resources Recommend Favorite