A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

By Abdi M.  

Journal of Computational Electronics, Vol. 10, Iss. 1-2, 2011-06 ,pp. : 179-185

Springer Publishing Company

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Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Nakatsuji Hiroshi   Kamakura Yoshinari   Taniguchi Kenji  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 109-112

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

By Yang L.   Watling J.   Adamu-Lema F.   Asenov A.   Barker J.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 171-175

Springer Publishing Company

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Analysis of Strained-Si Device including Quantum Effect

By Tanabe Ryo   Yamasaki Takahiro   Ashizawa Yoshio   Oka Hideki  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 387-391

Springer Publishing Company

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