An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity'

Author： Mahan A. H.   Beyer W.   Williamson D. L.   Yang J.   Guha S.  

Publisher： Taylor & Francis Ltd

ISSN： 1362-3036

Source： Philosophical Magazine Letters, Vol.80, Iss.9, 2000-08, pp. : 647-652

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