nm-Co 2 Si, CoSi and CoSi 2 silicide films from the single source precursor CoSiCl 3 (CO) 4 in the presence of SiH 4

By Prokop J.   Zybill C.E.   Veprek S.  

Thin Solid Films, Vol. 359, Iss. 1, 2000-01 ,pp. : 39-45

Elsevier

Access to resources Recommend Favorite

The growth of an intermediate CoSi phase during the formation of epitaxial CoSi 2 by solid phase reaction

By Falke M.   Gebhardt B.   Beddies G.   Teichert S.   Hinneberg H.-J.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 201-204

Elsevier

Access to resources Recommend Favorite

Influence of ion implantation induced defects on formation of buried CoSi 2 structures in Si(100)

By Hul'ko O.   Fraser J.   Zinke-Allmang M.  

Thin Solid Films, Vol. 413, Iss. 1, 2002-06 ,pp. : 52-58

Elsevier

Access to resources Recommend Favorite

Silicide formation and stability of Ti/SiGe and Co/SiGe

By Wang Z.   Aldrich D.B.   Chen Y.L.   Sayers D.E.   Nemanich R.J.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 555-560

Elsevier

Access to resources Recommend Favorite

CoSi 2 and TiSi 2 for Si/SiGe heterodevices

By Gluck M.   Schuppen A.   Rosler M.   Heinrich W.   Hersener J.   Konig U.   Yam O.   Eizenberg M.   Cytermann C.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 549-554

Elsevier

Access to resources Recommend Favorite