An interference method for the determination of thin film anisotropy

By Surdutovich G.I.   Kolenda J.   Fragalli J.F.   Misoguti L.   Vitlina R.   Baranauskas V.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 119-123

Elsevier

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New method of ultra-thin film characterization applied to the investigation of C/Ni/C structures under heat load

By Zheludeva S.I.   Kovalchuk M.V.   Novikova N.N.   Sosphenov A.N.   Malysheva N.E.   Salashenko N.N.   Akhsakhalyan A.D.   Platonov Y.Y.   Cernik R.I.   Collins S.P.  

Thin Solid Films, Vol. 259, Iss. 2, 1995-04 ,pp. : 131-138

Elsevier

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Effects of ion bombardment to interfaces on residual internal stress and crystallite structures on multilayered films

By Miyamoto Y.   Watanabe K.   Nakagawa S.   Naoe M.  

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 711-714

Elsevier

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A new method for the determination of the channel length reduction in polysilicon thin film transistors (TFTs)

By Farmakis F.V.   Brini J.   Kamarinos G.   Mathieu N.   Dimitriadis C.A.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 105-108

Elsevier

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Determination of residual stress in thin films: a comparative study of X-ray topography versus laser curvature method

By Zhao Z.B.   Hershberger J.   Yalisove S.M.   Bilello J.C.  

Thin Solid Films, Vol. 415, Iss. 1, 2002-08 ,pp. : 21-31

Elsevier

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