Advanced salicides for 0.10 m CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

Author： Kittl J.A.   Hong Q.Z.   Yang H.   Yu N.   Samavedam S.B.   Gribelyuk M.A.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.332, Iss.1, 1998-11, pp. : 404-411

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