Effect of oxidized Al prelayer for the growth of polycrystalline Al 2 O 3 films on Si using ionized beam deposition

By Whangbo S.W.   Choi Y.K.   Jang H.K.   Chung Y.D.   Lyo I.W.   Whang C.N.  

Thin Solid Films, Vol. 388, Iss. 1, 2001-06 ,pp. : 290-294

Elsevier

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Low temperature synthesis of dense SiO 2 thin films by ion beam induced chemical vapor deposition

By Barranco A.   Yubero F.   Cotrino J.   Espinos J.P.   Bentez J.   Rojas T.C.   Allain J.   Girardeau T.   Riviere J.P.   Gonzalez-Elipe A.R.  

Thin Solid Films, Vol. 396, Iss. 1, 2001-09 ,pp. : 9-15

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Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO2 substrate

By Doi M.   Suzuki Y.   Koyama T.   Katsuki F.  

Philosophical Magazine Letters, Vol. 78, Iss. 3, 1998-09 ,pp. : 241-245

Taylor & Francis Ltd

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Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO 2 and glass

By Olivares J.   Rodrguez A.   Sangrador J.   Rodrguez T.   Ballesteros C.   Kling A.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 51-54

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Effect of substrate heating on elimination of pinholes in sputtering deposited SiO 2 films on LiNbO 3 single crystal substrates

By Nagata H.   Fujino T.   Mitsugi N.   Tamai M.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 117-121

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