Author: Oda K. Ohue E. Tanabe M. Shimamoto H. Washio K.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 358-361
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High-speed transport in Si/Si 1-x-y Ge x C y heterostructures
By Muhlberger M. Schelling C. Sandersfeld N. Seyringer H. Schaffler F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Relaxed epitaxial Si 1-x Ge x grown by MBE
By Monakhov E.V. Shiryaev S.Y. Nylandsted Larsen A. Hartung J. Davies G.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors
By Schaffler F.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :