Photoinduced effects in RF and VHF a-Si:H films deposited with different ion bombardment

Author： Abramov A.S. Kosarev A.I. Roca i Cabarrocas P. Shutov M.V. Vinogradov A.J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.383, Iss.1, 2001-02, pp. : 178-180

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Role of ion bombardment on the properties of a-Si:H films

By Aguas H. Martins R. Fortunato E.

Vacuum, Vol. 60, Iss. 1, 2001-01 ,pp. : 247-254

Elsevier

Access to resources Recommend Favorite

Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

By Martins R. Aguas H. Ferreira I. Silva V. Cabrita A. Fortunato E.

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 165-168

Elsevier

Access to resources Recommend Favorite

Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD

By Liao N. -M.

Philosophical Magazine, Vol. 88, Iss. 25, 2008-09 ,pp. : 3051-3057

Taylor & Francis Ltd

Access to resources Recommend Favorite

Photoconducting a-Si:H films grown at high deposition rates by pulsing a VHF 100 MHz discharge

By Mukherjee C. Anandan C. Seth T. Dixit P.N. Bhattacharyya R.

Thin Solid Films, Vol. 423, Iss. 1, 2003-01 ,pp. : 18-26

Elsevier

Access to resources Recommend Favorite

Effect of ion implantation on the structural properties of a-Si:H films

By Danesh P. Pantchev B. Savatinova I. Liarokapis E. Schmidt B.

Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 83-86

Elsevier

Access to resources Recommend Favorite