Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

Elsevier

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

By Koulmann J.J.   Chelly R.   Angot T.   Louis P.   Bolmont D.   Werckmann J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

Elsevier

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Gas-source molecular beam epitaxial growth of SiGe alloy-based `naked' quantum wells

By Kishimoto Y.   Shiraki Y.   Fukatsu S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 81-85

Elsevier

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Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si 2 H 6 and PH 3

By Hirose F.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 230-232

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Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

By Kern R.S.   Smith S.A.   Jarrendahl K.   Zheleva T.   Davis R.F.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 189-191

Elsevier

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