High resolution diffraction and DLTS investigation results of the epitaxial Ga 1-x Al x As/GaAs layers produced with the MOCVD method

Author： Czekala-Mukalled Z.   Kunminski S.   Placzek-Popko E.   Szatkowski J.   Kozlowski J.   Jedral L.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.48, Iss.3, 1997-03, pp. : 269-271

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