Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

By Torrison L.   Tolle J.   Tsong I.S.T.   Kouvetakis J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

Elsevier

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

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Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films

By Akiyama M.   Xu C.-N.   Nonaka K.   Shobu K.   Watanabe T.  

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X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates

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Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si 2 H 6 and PH 3

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 230-232

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