Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave

By Itagaki N.   Kawakami S.   Ishii N.   Kawai Y.  

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 323-328

Elsevier

Access to resources Recommend Favorite

In-situ low-temperature (600 o C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth

By Kim H.-W.   Reif R.  

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 192-198

Elsevier

Access to resources Recommend Favorite

Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

By Flewitt A.J.   Dyson A.P.   Robertson J.   Milne W.I.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 172-177

Elsevier

Access to resources Recommend Favorite

Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method

By Garcia S.   Martin J.M.   Martil I.   Fernandez M.   Gonzalez-Diaz G.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 116-119

Elsevier

Access to resources Recommend Favorite

Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition

By Platen J.   Selle B.   Sieber I.   Brehme S.   Zeimer U.   Fuhs W.  

Thin Solid Films, Vol. 381, Iss. 1, 2001-01 ,pp. : 22-30

Elsevier

Access to resources Recommend Favorite