Influence and model of gate oxide breakdown on CMOS inverters

Author: Rodriguez R.   Stathis J.H.   Linder B.P.   Joshi R.V.   Chuang C.T.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1439-1444

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Abstract