TDDB characteristic and breakdown mechanism of ultra-thin SiO₂/HfO₂ bilayer gate dielectrics

By Fenfen Tao   Hong Yang   Bo Tang   Zhaoyun Tang   Yefeng Xu   Jing Xu   Qingpu Wang   Jiang Yan  

Journal of Semiconductors, Vol. 35, Iss. 6, 2014-06 ,pp. : 64003-64008

IOP Publishing

Access to resources Recommend Favorite

Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15016-15019

IOP Publishing

Access to resources Recommend Favorite

Electrical and physico-chemical characterization of HfO 2 /SiO 2 gate oxide stacks prepared by atomic layer deposition

By Damlencourt J.-F.   Renault O.   Samour D.   Papon A.-M.   Leroux C.   Martin F.   Marthon S.   Semeria M.-N.   Garros X.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1613-1616

Elsevier

Access to resources Recommend Favorite

Investigation of charge loss characteristics of HfO₂ annealed in N₂ or O₂ ambient

By Yuqiong Chu   Zongliang Huo   Yulong Han   Guoxing Chen   Dong Zhang   Xinkai Li   Ming Liu  

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 83004-83008

IOP Publishing

Access to resources Recommend Favorite

Low temperature atomic layer deposited HfO₂ film for high performance charge trapping flash memory application

By Chen Guoxing   Huo Zongliang   Jin Lei   Zhang Dong   Zhao Shengjie   Han Yulong   Liu Su   Liu Ming  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45019-45023

IOP Publishing

Access to resources Recommend Favorite