Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers

By Zhang Xinpeng     Yang Deren   Vanhellemont Jan  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85013-85020

IOP Publishing

Access to resources Recommend Favorite

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

By Zeng Yuheng  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 648-651

Springer Publishing Company

Access to resources Recommend Favorite

Damage formation during 1.0 MeV Si self-implantation at low temperatures

By Huang M.   Mitchell I.  

Journal of Electronic Materials, Vol. 28, Iss. 4, 1999-04 ,pp. : 385-389

Springer Publishing Company

Access to resources Recommend Favorite

Investigation of intrinsic-carrier concentration, minority-carrier concentration and built-in electric field for heavily boron-doped silicon with non-parabolic energy bands at low temperatures

By Zhixiong Xiao   Tongli Wei  

International Journal of Electronics, Vol. 81, Iss. 6, 1996-12 ,pp. : 647-656

Taylor & Francis Ltd

Access to resources Recommend Favorite

An investigation of the impact of a Ti barrier metal on the thermal stress field in passivated aluminium lines and vias in VLSI systems using finite element modelling approach

By Igic P. M.   Mawby P. A.  

International Journal of Electronics, Vol. 87, Iss. 11, 2000-11 ,pp. : 1289-1299

Taylor & Francis Ltd

Access to resources Recommend Favorite