A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy

Author: Eyink K.   Capano M.   Walck S.   Haas T.   Streetman B.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.26, Iss.4, 1997-04, pp. : 391-396

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