Si-implantation activation annealing of GaN up to 1400°C

Author: Zolper J.   Han J.   Biefeld R.   Deusen S.   Wampler W.   Reiger D.   Pearton S.   Williams J.   Tan H.   Karlicek R.   Stall R.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.27, Iss.4, 1998-04, pp. : 179-184

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Abstract