Author: Lee Heon Harris James
Publisher: Springer Publishing Company
ISSN: 1543-186X
Source: Journal of Electronic Materials, Vol.27, Iss.4, 1998-04, pp. : 185-189
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. :
By Batoni P. Patel K. Burkhart C. Shah T. Iyengar V. Ahrens M. Morton S. Bobbio S. Stokes E.
Journal of Electronic Materials, Vol. 36, Iss. 9, 2007-09 ,pp. :
Dopant-selective photoenhanced wet etching of GaN
By Youtsey C. Bulman G. Adesida I.
Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. :