Period of time: 2014年3期
Publisher: MAIK Nauka/Interperiodica
Founded in: 1972
Total resources: 32
ISSN: 1063-7397
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Russian Microelectronics,volume 33,issue 3
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By Ivin V. V.,Makhviladze T. M.,Valiev K. A. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.Pore Sealing on Si(001) and Si(111) in Homoepitaxy and Annealing: A Monte Carlo Simulation
By Zverev A. V.,Neizvestny I. G.,Chemakin A. V.,Shwartz N. L.,Yanovitskaya Z. Sh. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.By Vasiliev A. G.,Vasiliev A. L.,Zakharov R. A.,Orlikovsky A. A.,Horin I. A.,Eindou M. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.Effect of Surface Roughness on Quantum Carrier Transport in Ultrathin Films
By Ananiev S. D.,V'yurkov V. V.,Orlikovsky A. A. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.ZnO Thin Films with Hole Conduction Produced by N+ Ion Implantation and Oxygen-Radical Annealing
By Georgobiani A. N.,Gruzintsev A. N.,Volkov V. T.,Vorob'ev M. O.,Dravin V. A. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.Anisotropic Etching of SiO2 in High-Voltage Gas-Discharge Plasmas
By Kazanskii N. L.,Kolpakov V. A.,Kolpakov A. I. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.Circuit-Design Techniques of Radiation Hardening for Monolithic Op Amps
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.Power Consumption of Asymptotically Adiabatic Static Logic Gates
By Losev V. V.,Starosel'skii V. I. in (2004)
Russian Microelectronics,volume 33,issue 3 , Vol. 33, Iss. 3, 2004-05 , pp.