Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

By Sharma Rajiv   Pandey Sujata   Shail Bala Jain  

Journal of Semiconductors, Vol. 33, Iss. 2, 2012-02 ,pp. : 24001-24008

IOP Publishing

Access to resources Recommend Favorite

New approach for the gate current source-drain partition modeling in advanced MOSFETs

By Romanjek K.   Lime F.   Ghibaudo G.   Leroux C.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1657-1661

Elsevier

Access to resources Recommend Favorite

Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

By Xiaoyu Ma   Wanling Deng   Junkai Huang  

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 32002-32007

IOP Publishing

Access to resources Recommend Favorite

Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs

By Kim D.M.   Kim H.C.   Kim H.T.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1707-1712

Elsevier

Access to resources Recommend Favorite

Modelling the centroid and charge density in double-gate MOSFETs including quantum effects

By Vimala P.   Balamurugan N.B.  

International Journal of Electronics, Vol. 100, Iss. 9, 2013-09 ,pp. : 1283-1295

Taylor & Francis Ltd

Access to resources Recommend Favorite