New approach for the gate current source-drain partition modeling in advanced MOSFETs

Author: Romanjek K.   Lime F.   Ghibaudo G.   Leroux C.  

Publisher: Elsevier

ISSN: 0038-1101

Source: Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1657-1661

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Abstract