Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

Author： Fèvre A Menard S Defforge T Gautier G

E-ISSN： 1361-6641|31|1|14001-14009

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.31, Iss.1, 2016-01, pp. : 14001-14009

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Sub-circuit models of silicon-on-insulator insulated-gate pn-junction devices for electrostatic discharge protection circuit design and their applications

By Wakita S. Omura Y.

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 1943-1952

Elsevier

Access to resources Recommend Favorite

Low temperature saturation of p-n junction laser beam induced current signals

By Redfern D.A. Fang W. Ito K. Musca C.A. Dell J.M. Faraone L.

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 409-414

Elsevier

Access to resources Recommend Favorite

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite p–n junction

By He Jin Li Yingxue Zhang Xing Wang Yangyuan

International Journal of Electronics, Vol. 88, Iss. 10, 2001-10 ,pp. : 1067-1072

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

By Lu G. N. Chouikha M. Ben Sedjil M. Sou G. Alquie G.

International Journal of Electronics, Vol. 83, Iss. 3, 1997-09 ,pp. : 307-316

Taylor & Francis Ltd

Access to resources Recommend Favorite

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P⁺N junction diode

By Resfa A. Menezla Brahimi. R. Benchhima M.

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84002-84010

IOP Publishing

Access to resources Recommend Favorite