Formation of C49-TiSi 2 in flash memories: a nucleation controlled phenomenon?

Author： Mangelinck D. Gas P. Badeche T. Taing E. Nemouchi F. Perrin-Pellegrino C. Vuaroqueaux M. Niel S. Fornara P. Mirabel J.M. Fares L. Albarede P.H.

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.70, Iss.2, 2003-11, pp. : 220-225

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