Effect of tip length and normal and lateral contact stiffness on the flexural vibration responses of atomic force microscope cantilevers

By Wu T.-S.   Chang W.-J.   Hsu J.-C.  

Microelectronic Engineering, Vol. 71, Iss. 1, 2004-01 ,pp. : 15-20

Elsevier

Access to resources Recommend Favorite

Characterization of thin and ultra-thin SiO 2 films and SiO 2 /Si interfaces with combined conducting and topographic atomic force microscopy

By Frammelsberger W.   Benstetter G.   Schweinboeck T.   Stamp R.J.   Kiely J.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1465-1470

Elsevier

Access to resources Recommend Favorite

Influence of fabrication steps on optical and electrical properties of InN thin films

By Brazzini Tommaso   Méchin Laurence   Guillet Bruno   Routoure Jean-Marc   Doualan Jean-Louis   Grandal Javier   Calle Fernando   Ruterana Pierre      

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95010-95017

IOP Publishing

Access to resources Recommend Favorite

Chemical-Mechanical polishing of parylene- n films: evaluation by X-Ray photoelectron spectroscopy and atomic force microscopy

By Yang G.   Zhao Y.   Neirynck Jan   Murarka Shyam   Gutmann Ronald  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 935-940

Springer Publishing Company

Access to resources Recommend Favorite

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal–oxide–semiconductor capacitors

By Chen Liu   Yuming Zhang   Yimen Zhang   Hongliang Lü   Bin Lu  

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 124003-124006

IOP Publishing

Access to resources Recommend Favorite