Author： Kim Jongdae Kim Sang Gi Koo Jin Gun Roh Tae Moon Park Hoon Soo Kim Dae Yong
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.86, Iss.3, 1999-03, pp. : 269-279
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Abstract
The dynamic resistance of a heavily doped semiconductor resistor was evaluated by observing the electrical mobility and conductivity of the resistor as a function of temperature. It is known for the first time that the silicon resistor presents a PTCR (positive temperature coefficient of resistance) below its intrinsic temperature and an NTCR (negative temperature coefficient of resistance) above the intrinsic temperature but below the melting temperature, and again a PTCR beyond the melting temperature, when molten silicon becomes metallic. The special features of the resistor appear to be that the resistance increases due to joule heating, decreases due to negative resistance behaviour, and then the resistor is melted and vaporized to generate plasma.
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