Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory

Author： Chen Guoxing Huo Zongliang Han Yulong Li Xinkai Zhang Dong Liu Su Liu Ming

ISSN： 1058-4587

Source： Integrated Ferroelectrics, Vol.151, Iss.1, 2014-02, pp. : 56-60

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