Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal–ferroelectric–metal–insulator–semiconductor FET and its dynamic behaviour based on Landau theory

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|4|45011-45018

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.4, 2015-01, pp. : 45011-45018

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