Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and Cu lift-off

Author： Kouvatsos D.N.   Ioannou-Sougleridis V.   Tsevas S.   Christoforou F.   Davazoglou D.   Boukouras C.  

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.70, Iss.2, 2003-11, pp. : 501-505

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