Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba 2 Cu 3 O 7- superconducting devices on silicon

Author： Huot G.   Mechin L.   Bloyet D.  

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.70, Iss.2, 2003-11, pp. : 246-250

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