Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices

Author： Zander D. Saigne F. Meinertzhagen A. Petit C.

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1489-1493

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices

By Fadlallah M. Petit C. Meinertzhagen A. Ghibaudo G. Bidaud M. Simonetti O. Guyader F.

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1433-1438

Elsevier

Access to resources Recommend Favorite

Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide

By Petit C. Salace G. Vuillaume D.

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1663-1668

Elsevier

Access to resources Recommend Favorite

High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application

By Chen Yi-Hsuan Cheng-Yu William Chao Tien-Sheng

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105017-105022

IOP Publishing

Access to resources Recommend Favorite

Pre-breakdown leakage current fluctuations of thin gate oxide

By Reiner J.C.

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1507-1512

Elsevier

Access to resources Recommend Favorite

Impact of interface traps on gate-induced drain leakage current in n -type metal oxide semiconductor field effect transistor

By Touhami A. Bouhdada A.

International Journal of Electronics, Vol. 92, Iss. 9, 2005-09 ,pp. : 539-552

Taylor & Francis Ltd

Access to resources Recommend Favorite