Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

Author： Gehring A. Jimenez-Molinos F. Kosina H. Palma A. Gamiz F. Selberherr S.

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1495-1500

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