Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

Author： Porti M.   Nafria M.   Aymerich X.  

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1501-1505

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