Author： Zecri M. Besse P. Givelin P. Nayrolles M. Bafleur M. Nolhier N.
Publisher： Elsevier
ISSN： 0026-2714
Source： Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1551-1556
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Parts screening for ESD susceptibility
By Gorlov M. Emel’yanov V. Rubtsevich I. Smirnov D.
Russian Microelectronics, Vol. 34, Iss. 1, 2005-01 ,pp. :
A review of electrostatic discharge (ESD) in advanced semiconductor technology
By Voldman S.H.
Microelectronics Reliability, Vol. 44, Iss. 1, 2004-01 ,pp. :
A novel NLDMOS with a high ballast resistance for ESD protection
Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. :