Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress

Author： Sydlo C. Mutamba K. Divac Krnic L. Mottet B. Hartnagel H.L.

Publisher： Elsevier

ISSN： 0026-2714

Source： Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1929-1933

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

An integrated power divider implemented in GaAs technology

By Zebao Du Hao Yang Haiying Zhang Min Zhu

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 45003-45006

IOP Publishing

Access to resources Recommend Favorite

Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions

By Jasinski J. Liliental-Weber Z. Washburn J. Tan H. Jagadish C. Krotkus A. Marcinkevicius S. Kaminska M.

Journal of Electronic Materials, Vol. 26, Iss. 5, 1997-05 ,pp. : 449-458

Springer Publishing Company

Access to resources Recommend Favorite

A faster power MOSFET device with electrical stress treatment

By Salame C. Habchi R. Tazibt W. Khoury A. Mialhe P.

Microelectronics International, Vol. 22, Iss. 2, 2005-08 ,pp. : 35-37

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

EXPERIMENTAL STUDIES Of NEW GaAs METAL/INSULATOR/p-n+ SWITCHES USING LOW TEMPERATURE OXIDE

By YARN K. F.

Active and Passive Electronic Components, Vol. 25, Iss. 3, 2002-01 ,pp. : 233-237

Taylor & Francis Ltd

Access to resources Recommend Favorite

Reliability of low current electrical spring contacts in power modules

By Hornung E. Scheuermann U.

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1859-1864

Elsevier

Access to resources Recommend Favorite