Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Author: Zhicheng Z.   Bingyan R.   Yonghai C.   Shaoyan Y.   Zhanguo W.  

Publisher: Elsevier

ISSN: 0167-9317

Source: Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 504-509

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract