Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Author： Zhicheng Z.   Bingyan R.   Yonghai C.   Shaoyan Y.   Zhanguo W.  

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 504-509

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