New approach for the gate current source-drain partition modeling in advanced MOSFETs

Author： Romanjek K.   Lime F.   Ghibaudo G.   Leroux C.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1657-1661

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs

By Kim D.M.   Kim H.C.   Kim H.T.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1707-1712

Elsevier

Access to resources Recommend Favorite

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

By Ho C. S.  

International Journal of Electronics, Vol. 93, Iss. 3, 2006-03 ,pp. : 137-148

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

By Sharma Rajiv   Pandey Sujata   Shail Bala Jain  

Journal of Semiconductors, Vol. 33, Iss. 2, 2012-02 ,pp. : 24001-24008

IOP Publishing

Access to resources Recommend Favorite

Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

By Bhartia Mini   Bhartia Mini  

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 44003-44009

IOP Publishing

Access to resources Recommend Favorite

Reply to ‘Comment on “A compact drain current model of short-channel cylindrical gate-all-around MOSFETs”’

By Tsormpatzoglou A   Tassis D H   Dimitriadis C A  

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38002-38002

IOP Publishing

Access to resources Recommend Favorite