Electrical properties of Si-SiO 2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick

Author： Bauza D.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1677-1683

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