Impact of filtering on nanotopography measurement of 300mm silicon wafers

Author： Riedel F. Gerber H.-A. Wagner P.

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.4, 2002-08, pp. : 465-472

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

On the impact of nanotopography of silicon wafers on post-CMP oxide layers

By Schmolke R. Deters R. Thieme P. Pech R. Schwenk H. Diakourakis G.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 413-418

Elsevier

Access to resources Recommend Favorite

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

By Tomzig E. Virbulis J. von Ammon W. Gelfgat Y. Gorbunov L.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 347-351

Elsevier

Access to resources Recommend Favorite

E-MRS Spring Meeting 2002. The 300mm Silicon Era: Material, Equipment, Technology

By Richter H. Umeno M. Wagner P.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 311-311

Elsevier

Access to resources Recommend Favorite

A roadmap towards cost efficient 300mm equipment

By Pfitzner L. Kucher P.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 321-331

Elsevier

Access to resources Recommend Favorite

Defect requirements for advanced 300mm DRAM substrates

By Kupfer C. Roth H. Dietrich H.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 4, 2002-08 ,pp. : 381-386

Elsevier

Access to resources Recommend Favorite